Ashraf N Parameter-Centric Scaled FET Devices Physics Based Perspectives 2025
General:
Name: Ashraf N Parameter-Centric Scaled FET Devices Physics Based Perspectives 2025
Format: pdf
Size: 2.93 MB
Book:
Title: Parameter-Centric Scaled FET Devices
Author: Nabil Shovon Ashraf
Language: polski
Year: 2025
Subjects: Science, Technology, Nonfiction
Publisher: Springer Nature Switzerland
ISBN: 9783031842856
Total pages: 148
Description:
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based FET models that critically determine the FET performance at room temperature as well as at very low temperatures. Emphasize is put on analysis that is based on the device physics, especially at low (cryogenic) temperatures. Performance of gate-all-around (GAA) nanowire FETs, and stacked nanosheet complementary FETs (C-FET) are also discussed.
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